A new generation of NAND flash memory for what will be the next terminal point of the Galaxy series, next in its sixth generation. According to the Korean newspaper ETNews that he got the news from a source inside the Korean manufacturer, Samsung Galaxy S6 will be the company’s first device to use a new type of memory for internal storage called Universal Flash Storage 2.0 , or UFS.
These modules are able to achieve processing speeds almost comparable to the current solid-state drives, or SSDs, replacing the more common eMMC. Up to three times faster according to the statement, the Bandwitch is able to get to 1.2GB / s for lower power consumption than current eMMC with the new revision 2.0 UFS.
The UFS standard was approved by the JEDEC (Joint Electron Device Engineering Council) back in 2007 thanks to the collaboration between Samsung, Nokia and Micron. The next development that has led to new forms UFS 2.0 also involved SK Hynix and Toshiba and the start of mass production is expected during the course of the next few weeks.
In addition to smartphones, Samsung is preparing to use these new chips also on SD and microSD cards with other devices that require memory storage, however, the Korean manufacturer will not be the only one who in 2015 presented a smartphone with this technology, also Xiaomi have expressed their intention to use the new memories UFS 2.0 for products coming out, then you will fight a challenge on the edge of the performance as early as the first half of next year.
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